Lee, Young Tack Hwang, Do Kyung Im, Seongil 2024-01-20T06:00:29Z 2024-01-20T06:00:29Z 2021-09-04 2015-11 0374-4884 https://pubs.kist.re.kr/handle/201004/124842 Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm2/Vs with a high on/off current ratio of more than 107, and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated. English 한국물리학회 High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode Article 10.3938/jkps.67.1499 1 Journal of the Korean Physical Society, v.67, no.9, pp.L1499 - L1503 Journal of the Korean Physical Society 67 9 L1499 L1503 N scie scopus kci ART002047941 000365103800001 2-s2.0-84947445985 Physics, Multidisciplinary Physics Article METAL PHOTOTRANSISTORS TRANSITION MOBILITY MoS2 PVDF-TrFE Ferroelectric field-effect transistor (FeFET)