Kim, SangHyeon Geum, Dae-Myeong Park, Min-Su Kim, Chang Zoo Choi, Won Jun 2024-01-20T06:02:20Z 2024-01-20T06:02:20Z 2021-09-05 2015-10 0927-0248 https://pubs.kist.re.kr/handle/201004/124936 In this work, we developed wafer bonding techniques to bond GaAs and Si wafers. Wafer bonding was carried out at room temperature without high temperature annealing processes. The bonded interface showed a low interface resistance of 8.8 x 10(-3) Omega cm(2). We also exploited the new bonding techniques to fabricate a GaAs solar cell on a Si substrate. The solar cell showed a high energy conversion efficiency (13.25%) even without an anti reflection coating. The performance of the fabricated GaAs/Si solar cell was comparable to that of a homogeneous GaAs solar cell grown on a GaAs substrate. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV EFFICIENCY DISLOCATIONS CONVERSION GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding Article 10.1016/j.solmat.2015.06.021 1 SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.141, pp.372 - 376 SOLAR ENERGY MATERIALS AND SOLAR CELLS 141 372 376 scie scopus 000359504200046 2-s2.0-84936860765 Energy & Fuels Materials Science, Multidisciplinary Physics, Applied Energy & Fuels Materials Science Physics Article EFFICIENCY DISLOCATIONS CONVERSION Wafer bonding GaAs on Si GaAs solar cell GaAs/Si