Kim, Soo Min Hsu, Allen Park, Min Ho Chae, Sang Hoon Yun, Seok Joon Lee, Joo Song Cho, Dae-Hyun Fang, Wenjing Lee, Changgu Palacios, Tomas Dresselhaus, Mildred Kim, Ki Kang Lee, Young Hee Kong, Jing 2024-01-20T06:02:52Z 2024-01-20T06:02:52Z 2021-09-05 2015-10 2041-1723 https://pubs.kist.re.kr/handle/201004/124966 Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 +/- 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of similar to 24,000 cm(2)V(-1) s(-1) at room temperature, higher than that (similar to 13,000(2)V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. English NATURE PUBLISHING GROUP WAFER-SCALE GRAPHENE FILMS LAYER MOS2 MONOLAYER GROWTH CU(111) NI(111) Synthesis of large-area multilayer hexagonal boron nitride for high material performance Article 10.1038/ncomms9662 1 NATURE COMMUNICATIONS, v.6 NATURE COMMUNICATIONS 6 scie scopus 000364936200004 2-s2.0-84945941542 Multidisciplinary Sciences Science & Technology - Other Topics Article WAFER-SCALE GRAPHENE FILMS LAYER MOS2 MONOLAYER GROWTH CU(111) NI(111) Hexagonal boron nitride Synthesis CVD