Lee, Young Tack Kwon, Hyeokjae Kim, Jin Sung Kim, Hong-Hee Lee, Yun Jae Lim, Jung Ah Song, Yong-Won Yi, Yeonjin Choi, Won-Kook Hwang, Do Kyung Im, Seongil 2024-01-20T06:03:00Z 2024-01-20T06:03:00Z 2021-09-04 2015-10 1936-0851 https://pubs.kist.re.kr/handle/201004/124974 Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon–fluorine (C–F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm2 V–1 s–1 with a 103 on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%. English American Chemical Society Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer Article 10.1021/acsnano.5b04592 1 ACS Nano, v.9, no.10, pp.10394 - 10401 ACS Nano 9 10 10394 10401 N scie scopus 000363915300095 2-s2.0-84945900244 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article THIN-FILM TRANSISTORS TRANSPORT TRANSITION MONOLAYERS INVERTERS MOBILITY GAS MoS2 2D nanosheet transistor P(VDF-TrFE) ferroelectric memory CMOS dual-gate transistor black phosphorus (BP)