Park, Youn Ho Kim, Hyung-Jun Chang, Joonyeon Choi, Heon-Jin Koo, Hyun Cheol 2024-01-20T06:03:19Z 2024-01-20T06:03:19Z 2021-09-04 2015-10 1533-4880 https://pubs.kist.re.kr/handle/201004/124992 In a semiconductor channel, spin-orbit interaction is divided into two terms, Rashba and Dresselhaus effects, which are key phenomena for modulating spin precession angles. The direction of Rashba field is always perpendicular to the wavevector but that of Dresselhaus field depends on the crystal orientation. Based on the individual Rashba and Dresselhaus strengths, we calculate spin precession angles for various crystal orientations in an In As quantum well structure. When the channel length is 1 mu m, the precession angle is 550 degrees for the [110] direction and 460 degrees for the [1-10] direction, respectively. Using the two spin transistors with different crystal directions, which play roles of n- and p-type transistors in conventional charge transistors, we propose a complementary logic device. English AMER SCIENTIFIC PUBLISHERS Crystalline Direction Dependence of Spin Precession Angle and Its Application to Complementary Spin Logic Devices Article 10.1166/jnn.2015.11143 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.7518 - 7521 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 15 10 7518 7521 scie scopus 000365554600018 2-s2.0-84947290427 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article Spin-Orbit Interaction Rashba Effect Dresselhaus Effect Spin Precession Angle Spin-FET