Kim, Jin Sung Jeon, Pyo Jin Lee, Junyeong Choi, Kyunghee Lee, Hee Sung Cho, Youngsuk Lee, Young Tack Hwang, Do Kyung Im, Seongil 2024-01-20T06:04:38Z 2024-01-20T06:04:38Z 2021-09-05 2015-09 1530-6984 https://pubs.kist.re.kr/handle/201004/125058 We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs have a patterned-gate architecture with 30 nm-thick Al2O3 dielectrics on top and bottom of a BP channel. Top gate dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage of FETs as well when FETs mainly operate under bottom gate bias. Bottom, top, and dual gate-controlling mobilities were estimated to be 277, 92, and 213 cm2/V s, respectively. Maximum ON-current was measured to be ∼5 μA at a drain voltage of −0.1 V but to be as high as ∼50 μA at −1 V, while ON/OFF current ratio appeared to be 3.6 × 103 V. As a result, our dual gate BP FETs demonstrate organic light emitting diode (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions by separately using top- and bottom-input. English American Chemical Society Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching Article 10.1021/acs.nanolett.5b01746 1 Nano Letters, v.15, no.9, pp.5778 - 5783 Nano Letters 15 9 5778 5783 N scie scopus 000361252700017 2-s2.0-84941059114 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article PHOTOLUMINESCENCE OPTOELECTRONICS PASSIVATION CIRCUITS Black phosphorus dual-gate FET OLED switching NOR logic inverter