Kim, SangHyeon Park, Min-Su Geum, Dae-Myeong Kim, Hosung Ryu, GuenHwan Yang, Hyun-Duk Song, Jin Dong Kim, Chang Zoo Choi, Won Jun 2024-01-20T06:30:20Z 2024-01-20T06:30:20Z 2021-09-05 2015-09 1567-1739 https://pubs.kist.re.kr/handle/201004/125074 In this paper, we present GaAs solar cells on Si substrate by direct epitaxial growth of III-V layers on Si substrate. Fabricated solar cells have shown relatively high energy conversion efficiency of 11.17% without anti reflection coating. By analyzing external quantum efficiency, dark I-V characteristics, and photo luminescence spectra, we have found that possible defect state near the band edge strongly impact on the performance of GaAs solar cell on Si and termination of these defects will further improve the performance of GaAs solar cell directly grown on Si substrates. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER EFFICIENCY CONVERSION Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate Article 10.1016/j.cap.2015.04.022 1 CURRENT APPLIED PHYSICS, v.15, pp.S40 - S43 CURRENT APPLIED PHYSICS 15 S40 S43 scie scopus kci 000362917600010 2-s2.0-84942373351 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper EFFICIENCY CONVERSION Compound solar cell III-V on Si Device characterization