Yang, Yiming Peng, Xingyue Kim, Hong-Seok Kim, Taeho Jeon, Sanghun Kang, Hang Kyu Choi, Wonjun Song, Jindong Doh, Yong-Joo Yu, Dong 2024-01-20T06:30:28Z 2024-01-20T06:30:28Z 2021-09-05 2015-09 1530-6984 https://pubs.kist.re.kr/handle/201004/125082 We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption. English AMER CHEMICAL SOC VOLTAGE BAND Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory Article 10.1021/acs.nanolett.5b01962 1 NANO LETTERS, v.15, no.9, pp.5875 - 5882 NANO LETTERS 15 9 5875 5882 scie scopus 000361252700032 2-s2.0-84941072122 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article VOLTAGE BAND Nanowire hot carriers negative photoconductance indium arsenide scanning photocurrent microscopy nonvolatile memory