Garay, Adrian Adalberto Hwang, Su Min Choi, Ji Hyun Min, Byoung Chul Chung, Chee Won 2024-01-20T06:30:41Z 2024-01-20T06:30:41Z 2021-09-04 2015-09 0042-207X https://pubs.kist.re.kr/handle/201004/125094 The etch characteristics of TIN hard mask patterned CoFeB thin films were investigated using an inductively coupled plasma reactive ion etching in a CH3COOH/Ar gas mixture. The etch characteristics of CoFeB magnetic thin film and TiN hard masks were investigated as a function of gas mixture concentration, coil rf power, dc-bias voltage and gas pressure. As CH3COOH concentration in the CH3COOH/Ar gas mixture increased, the etch rates of CoFeB films and degree of anisotropy in the etch profile decreased, while increased coil rf-power and dc bias voltage and reduced gas pressure increased the etch rate and improved the etch profile. Additionally, a thick hydrocarbon layer was formed on the film surface at a dc-bias voltage of 100 V. X-ray photoelectron spectroscopy and optical emission spectroscopy analyses of the etched films at various CH3COOH concentrations suggest that CoFeB thin films etched in a CH3COOH/Ar gas mixture follow a physical sputtering etch mechanism assisted by oxidation of the film and formation of a protective inhibition layer on the film surface. Etching of TiN patterned CoFeB films with a high degree of anisotropy was accomplished without redepositions or etch residues when conducted under high sputtering conditions. (C) 2015 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture Article 10.1016/j.vacuum.2015.05.018 1 VACUUM, v.119, pp.151 - 158 VACUUM 119 151 158 scie scopus 000359168900023 2-s2.0-84930646171 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TUNNEL-JUNCTION STACKS HIGH-DENSITY PLASMA COSM COZR CoFeB thin film Inductively coupled plasma reactive ion etching CH3COOH gas Magnetic random access memory