Koo, Hyun Cheol Jung, Inhwa Kim, Chulwoo 2024-01-20T06:30:45Z 2024-01-20T06:30:45Z 2021-09-04 2015-09 0018-9383 https://pubs.kist.re.kr/handle/201004/125097 The spin-FET has been realized using a semiconductor channel, but two complementary transistors analogous to n- and p-type of the conventional charge transistors have not yet been developed. We propose a complementary logic device consisting of two types of devices, namely, parallel and antiparallel spin transistors, in which the alignments of the magnetization directions of the source and the drain electrodes are parallel or antiparallel, respectively. Only one of the two transistors is conducting at a given gate voltage. An assessment of the feasibility was carried out by performing logic gate simulations based on the experimental spin transistor parameters. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC FIELD-EFFECT TRANSISTOR Spin-Based Complementary Logic Device Using Datta-Das Transistors Article 10.1109/TED.2015.2451618 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.9, pp.3056 - 3060 IEEE TRANSACTIONS ON ELECTRON DEVICES 62 9 3056 3060 scie scopus 000360401500055 2-s2.0-85027922719 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article FIELD-EFFECT TRANSISTOR FET logic devices magnetoresistance spin-FET spin-polarized transport