Yang, Min Kyu Kim, Gun Hwan Ju, Hyunsu Lee, Jeon-Kook Ryu, Han-Cheol 2024-01-20T06:31:35Z 2024-01-20T06:31:35Z 2021-09-05 2015-08-03 0003-6951 https://pubs.kist.re.kr/handle/201004/125136 Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 x 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure. (C) 2015 AIP Publishing LLC. English AMER INST PHYSICS MEMORY The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film Article 10.1063/1.4928249 1 APPLIED PHYSICS LETTERS, v.107, no.5 APPLIED PHYSICS LETTERS 107 5 scie scopus 000359375700042 2-s2.0-84938801316 Physics, Applied Physics Article MEMORY resistive switching MnOx thin films Ti electrode Pt electrode interfacial layer effect crossbar array