Srivastava, Pooja Shin, Mincheol Lee, Kwang-Ryeol Mizuseki, Hiroshi Kim, Seungchul 2024-01-20T06:32:17Z 2024-01-20T06:32:17Z 2021-09-05 2015-08 2158-3226 https://pubs.kist.re.kr/handle/201004/125175 We show, using density functional theory (DFT) calculations, that the Schottky barrier height (SBH) at the PtSi/Si interface can be lowered by uniaxial strain applied not only on Si but also on PtSi. The strain was applied to the (001) direction of Si and PtSi, which is normal for the interface. The SBH of the hole is lowered by 0.08 eV under 2% of tensile strain on Si and by 0.09 eV under 4 % of compressive strain on PtSi. Because the SBH at PtSi/Si contact is approximately 0.2 eV, this amount of reduction can significantly lower the resistance of the PtSi/Si contact; thus applying uniaxial strain on both PtSi and Si possibly enhances the performance of Schottky barrier field effect transistors. Theoretical models of SB formation and conventional structure model are evaluated. It is found that Pt penetration into Si stabilizes the interface and lowers the SBH by approximately 0.1 eV from the bulk-terminated interface model, which implies that conventionally used bulk-terminated interface models have significant errors. Among the theoretical models of SB formation, the model of strong Fermi level pining adequately explains the electron transfer phenomena and SBH, but it has limited ability to explain SBH changes induced by changes of interface structure. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. English AMER INST PHYSICS IN-DIFFUSION TOTAL-ENERGY SI SEMICONDUCTOR HEIGHT SILICON MOSFET MODEL The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation Article 10.1063/1.4928323 1 AIP ADVANCES, v.5, no.8 AIP ADVANCES 5 8 scie scopus 000360655900018 2-s2.0-84938771449 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article IN-DIFFUSION TOTAL-ENERGY SI SEMICONDUCTOR HEIGHT SILICON MOSFET MODEL Schotkky Barrier platinum silicide PtSi SB-MOSFET strain Schottky barrier modulation