임해나 이진주 최지원 2024-01-20T06:33:50Z 2024-01-20T06:33:50Z 2022-01-10 2015-07 1225-5475 https://pubs.kist.re.kr/handle/201004/125256 In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the microstructure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes. Korean 한국센서학회 Surface and Electrical Properties of 2wt% Cr-doped Ni Ultrathin Film Electrode for MLCCs Article 2 센서학회지, v.24, no.4, pp.224 - 227 센서학회지 24 4 224 227 N kci ART002017060 Cr-doped Ni Metal electrode Electrical properties Ultrathin films electrode MLCCs Sputtering