Park, Chan-Rok Kim, Shin Ik Moon, Seon Young You, Yil-Hwan Seo, Jung Hwan Baek, Seung-Hyub Kim, Seong Keun Kang, Chong-Yun Kim, Jin-Sang Hwang, Jin-Ha 2024-01-20T06:33:54Z 2024-01-20T06:33:54Z 2021-09-05 2015-07 0022-3697 https://pubs.kist.re.kr/handle/201004/125260 The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport. (C) 2015 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD SPECTROSCOPY CHARACTERIZATION POLARIZATION Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer Article 10.1016/j.jpcs.2015.03.002 1 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.82, pp.60 - 66 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 82 60 66 scie scopus 000353741600010 2-s2.0-84925243054 Chemistry, Multidisciplinary Physics, Condensed Matter Chemistry Physics Article SPECTROSCOPY CHARACTERIZATION POLARIZATION Impedance spectroscopy 2DEG Interface LaAlO3/SrTiO3 Oxygen vacancies