Kim, HoSung Park, MinSu Kim, SangHyeon Kim, SangHyuck Song, JinDong Choi, WonJun Park, JungHo Lee, YooJong 2024-01-20T06:34:12Z 2024-01-20T06:34:12Z 2021-09-05 2015-07 1071-1023 https://pubs.kist.re.kr/handle/201004/125277 The authors describe performance enhancement in InAs/GaAs quantum dot solar cells (QDSCs) using hydrogen plasma treatment. Photoluminescence (PL) and time-resolved PL revealed clearly decreased defect levels in QDSCs and improved crystal quality after hydrogen passivation. As a result, the open-circuit voltage and efficiency of the hydrogen-treated QDSCs were largely increased about 70mV and 10%, respectively. (C) 2015 American Vacuum Society. English A V S AMER INST PHYSICS MOLECULAR-BEAM EPITAXY DX CENTERS GAAS PASSIVATION EFFICIENCY GROWTH Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment Article 10.1116/1.4926630 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.4 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 33 4 scie scopus 000358676700016 2-s2.0-84937393033 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article MOLECULAR-BEAM EPITAXY DX CENTERS GAAS PASSIVATION EFFICIENCY GROWTH