Jeon, Woojin Rha, Sang Ho Lee, Woongkyu An, Cheol Hyun Chung, Min Jung Kim, Sang Hyun Cho, Cheol Jin Kim, Seong Keun Hwang, Cheol Seong 2024-01-20T06:34:39Z 2024-01-20T06:34:39Z 2021-09-04 2015-07 1862-6254 https://pubs.kist.re.kr/handle/201004/125302 The energy diagram of RuO2/Al-doped TiO2/RuO2 structures was estimated from the capacitance-voltage and leakage current density-voltage curves. The Al-doping profile in TiO2 film was varied by changing position of the atomic layer deposition cycle of Al2O3 during the atomic layer deposition of 9 nm-thick TiO2 film. The interface between the TiO2 film and the RuO2 electrode containing Al-doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (C) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) English WILEY-V C H VERLAG GMBH EQUIVALENT OXIDE THICKNESS ATOMIC LAYER DEPOSITION THIN-FILMS CAPACITORS NM Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage Article 10.1002/pssr.201510146 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.9, no.7, pp.410 - 413 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 9 7 410 413 scie scopus 000358281500005 2-s2.0-84937629555 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article EQUIVALENT OXIDE THICKNESS ATOMIC LAYER DEPOSITION THIN-FILMS CAPACITORS NM TiO2 Al doping capacitance leakage current asymmetric Schottky barrier thin films