Mnoyan, Anush N. Kirakosyan, Artavazd Gh. Kim, Hyunki Jang, Ho Seong Jeon, Duk Young 2024-01-20T07:00:23Z 2024-01-20T07:00:23Z 2021-09-05 2015-06-30 0743-7463 https://pubs.kist.re.kr/handle/201004/125320 Electrostatically stabilized InP quantum. dots (QDs) showing a high luminescence yield of 16% without any long alkyl chain coordinating ligands on their surface are demonstrated: This is achieved by UV-etching the QDs in the presence of fluoric and sulfuric acids. Fluoric acid plays a critical role in selectively etching nonradiative sites during the ligand-exchange process and in relieving the acidity of the solution to prevent destruction of the QDs. Given that the InP QDs show high luminescence without any electrical barriers, such as long alkyl ligands or inorganic shells, this method can be applied for QD treatment for application to highly efficient QD-based optoelectronic devices. English AMER CHEMICAL SOC NANOCRYSTALS Electrostatic Stabilized InP Colloidal Quantum Dots with High Photoluminescence Efficiency Article 10.1021/acs.langmuir.5b00847 1 LANGMUIR, v.31, no.25, pp.7117 - 7121 LANGMUIR 31 25 7117 7121 scie scopus 000357435600022 2-s2.0-84933557548 Chemistry, Multidisciplinary Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science Article NANOCRYSTALS Cd-free 양자점 photoluminescence InP