Bonaedy, Taufik Choi, Jun Woo Jang, Chaun Min, Byoung-Chul Chang, Joonyeon 2024-01-20T07:01:24Z 2024-01-20T07:01:24Z 2021-09-05 2015-06 0022-3727 https://pubs.kist.re.kr/handle/201004/125372 Electric-field-induced modification of magnetic anisotropy is studied using tunnel magnetoresistance of the Co40Fe40B20/MgO/Co40Fe40B20 and Co40Fe40B20/Hf (0.08 nm)/MgO/Co40Fe40B20 magnetic tunnel junctions. In both systems, the interfacial perpendicular magnetic anisotropy is increased with increasing electron density at the MgO interface. A quantitative comparison between the two systems reveals that the change of magnetic anisotropy energy with electric field is significantly enhanced in Co40Fe40B20/Hf/MgO/Co40Fe40B20 compared to Co40Fe40B20/MgO/Co40Fe40B20. The sub-monolayer Hf insertion at the Co40Fe40B20/MgO interface turns out to be critical to the enhanced electric field control of the magnetic anisotropy, indicating the interface sensitive nature of the effect. English IOP PUBLISHING LTD Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions Article 10.1088/0022-3727/48/22/225002 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.22 JOURNAL OF PHYSICS D-APPLIED PHYSICS 48 22 scie scopus 000354600500002 2-s2.0-84936148533 Physics, Applied Physics Article ATOMIC LAYERS spintronics magnetic anisotropy electric field control of magnetism