Lee, Jae-Uk Lee, Deuk-Hee Kwon, Beomjin Hyun, Dow-Bin Nahm, Sahn Baek, Seung-Hyub Kim, Jin-Sang 2024-01-20T07:01:40Z 2024-01-20T07:01:40Z 2021-09-05 2015-06 0361-5235 https://pubs.kist.re.kr/handle/201004/125385 In the present work, 0.01-0.05wt.% Sn-doped Bi-2(Te0.9Se0.1)(3) alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi-2(Te0.9Se0.1)(3) alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 x 10(19)/cm(3) to 2.4 x 10(19)/cm(3) by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample. English SPRINGER PERFORMANCE TELLURIDE CRYSTALS HEAT Effect of Sn Doping on the Thermoelectric Properties of n-type Bi-2(Te,Se)(3) Alloys Article 10.1007/s11664-014-3598-z 1 JOURNAL OF ELECTRONIC MATERIALS, v.44, no.6, pp.1926 - 1930 JOURNAL OF ELECTRONIC MATERIALS 44 6 1926 1930 scie scopus 000353813700080 2-s2.0-84939962781 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article; Proceedings Paper PERFORMANCE TELLURIDE CRYSTALS HEAT Bismuth telluride thermoelectric Sn doping mechanical deformation hot press