Kim, Kwang-Chon Kwon, Beomjin Kim, Hyun Jae Baek, Seung-Hyub Park, Chan Kim, Seong Keun Kim, Jin-Sang 2024-01-20T07:01:57Z 2024-01-20T07:01:57Z 2021-09-05 2015-06 0361-5235 https://pubs.kist.re.kr/handle/201004/125401 The effect of Sn doping on the thermoelectric properties of p-type Bi0.4Sb1.6Te3 (BST) thin films was studied. Sn-doped BST films were grown on 4A degrees tilted GaAs (001) substrates by metal-organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H-2 flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H-2 flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H-2 flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films. English SPRINGER CHEMICAL-VAPOR-DEPOSITION DEVICES MERIT Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films Article 10.1007/s11664-014-3483-9 1 JOURNAL OF ELECTRONIC MATERIALS, v.44, no.6, pp.1573 - 1578 JOURNAL OF ELECTRONIC MATERIALS 44 6 1573 1578 scie scopus 000353813700031 2-s2.0-84939986308 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION DEVICES MERIT Sn doping Bi0.4Sb1.6Te3 thermoelectric MOCVD