Shin, Hyun Wook Lee, Sang Jun Kim, Doo Gun Bae, Myung-Ho Heo, Jaeyeong Choi, Kyoung Jin Choi, Won Jun Choe, Jeong-woo Shin, Jae Cheol 2024-01-20T07:02:04Z 2024-01-20T07:02:04Z 2021-09-04 2015-06 2045-2322 https://pubs.kist.re.kr/handle/201004/125407 One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics. English NATURE PUBLISHING GROUP Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays Article 10.1038/srep10764 1 SCIENTIFIC REPORTS, v.5 SCIENTIFIC REPORTS 5 N scie scopus 000355613400001 2-s2.0-84934881091 Multidisciplinary Sciences Science & Technology - Other Topics Article SOLAR-CELLS INTEGRATION SILICON SI(100) DEVICES REGION InAs Nano wire SWIR Si substrate