Jae Won Oh Il-Wook Cho 류미이 송진동 2024-01-20T07:03:24Z 2024-01-20T07:03:24Z 2021-09-06 2015-05 1225-8822 https://pubs.kist.re.kr/handle/201004/125473 InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migrationenhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles. English 한국진공학회 Optical Properties of InP/InGaP Quantum Structures Grown by a Migration Enhanced Epitaxy with Different Growth Cycles Article 10.5757/ASCT.2015.24.3.67 2 한국진공학회지, v.24, no.3, pp.67 - 71 한국진공학회지 24 3 67 71 N kci ART001995696 InP Quantum structure Photoluminescence Time-resolved photoluminescence