Yun, Seok Joon Chae, Sang Hoon Kim, Hyun Park, Jin Cheol Park, Ji-Hoon Han, Gang Hee Lee, Joo Song Kim, Soo Min Oh, Hye Min Seok, Jinbong Jeong, Mun Seok Kim, Ki Kang Lee, Young Hee 2024-01-20T07:03:27Z 2024-01-20T07:03:27Z 2021-09-05 2015-05 1936-0851 https://pubs.kist.re.kr/handle/201004/125475 We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 degrees C helps to increase a domain size up to 420 mu m. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm(2) V-1 s(-1) with high on-off ratio of similar to 10(8) at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 x 1.5 cm(2). English AMER CHEMICAL SOC SINGLE-LAYER ATOMIC LAYERS HIGH-QUALITY OPTICAL-TRANSITIONS LIGHT-EMISSION MOS2 GROWTH AU FOILS WS2 GRAPHENE MONO Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils Article 10.1021/acsnano.5b01529 1 ACS NANO, v.9, no.5, pp.5510 - 5519 ACS NANO 9 5 5510 5519 scie scopus 000355383000088 2-s2.0-84930667045 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article SINGLE-LAYER ATOMIC LAYERS HIGH-QUALITY OPTICAL-TRANSITIONS LIGHT-EMISSION MOS2 GROWTH AU FOILS WS2 GRAPHENE MONO tungsten disulfide chemical vapor deposition transition metal dichalcogenides gold field effect transistor bubbling transfer