Kim, Sang Hyeon Geum, Dae-Myeong Park, Min-Su Choi, Won Jun 2024-01-20T07:03:47Z 2024-01-20T07:03:47Z 2021-09-05 2015-05 0741-3106 https://pubs.kist.re.kr/handle/201004/125493 In this letter, we have investigated electrical properties of metal-oxide-semiconductor (MOS) gate stack of Pt/Y2O3/In0.53Ga0.47As under different annealing conditions. We have found that proper annealing step significantly improves MOS interfacial properties of Pt/Y2O3/In0.53Ga0.47As MOS capacitors. Finally, we have realized MOS interface with a low density of trap state (D-it) of 4 x 10(12) eV(-1) . cm(-2) and hysteresis of 15 mV using postmetallization annealing at 350 degrees C. Furthermore, we also first demonstrated In0.53Ga0.47As-on-insulator (-OI) transistors with Y2O3 buried oxide layer using developed MOS interface. Fabricated In0.53Ga0.47As-OI transistors show good I-V characteristics and high peak mobility of similar to 2000 cm(2)/Vs. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide Article 10.1109/LED.2015.2417872 1 IEEE ELECTRON DEVICE LETTERS, v.36, no.5, pp.451 - 453 IEEE ELECTRON DEVICE LETTERS 36 5 451 453 scie scopus 000353566300010 2-s2.0-84928753371 Engineering, Electrical & Electronic Engineering Article InGaAs MOSFETs III-V MOSFETs InGaAs-OI wafer bonding III-V compound semiconductor