Park, Youn Ho Choi, Jun Woo Chang, Joonyeon Choi, Heon-Jin Koo, Hyun Cheol 2024-01-20T07:04:04Z 2024-01-20T07:04:04Z 2021-09-05 2015-05 1567-1739 https://pubs.kist.re.kr/handle/201004/125508 Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and -36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors Article 10.1016/j.cap.2015.02.018 1 CURRENT APPLIED PHYSICS, v.15, pp.S32 - S35 CURRENT APPLIED PHYSICS 15 S32 S35 scie scopus kci 000359884300008 2-s2.0-84938287639 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper Spintronics Rashba effect Spin logic device Spin transistor