Kim, Seongjun Seo, Tae Hoon Kim, Myung Jong Song, Keun Man Suh, Eun-Kyung Kim, Hyunsoo 2024-01-20T07:31:36Z 2024-01-20T07:31:36Z 2021-09-04 2015-04 1998-0124 https://pubs.kist.re.kr/handle/201004/125629 The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of similar to 10(7) at +/- 2 V and a low reverse leakage current of 1.0 x 10(-8) A/cm(2) at -5 V were observed. The Schottky barrier heights, as determined by the thermionic emission model, Richardson plots, and barrier inhomogeneity model, were 0.90, 0.72, and 1.24 +/- 0.13 eV, respectively. Despite the predicted low barrier height of similar to 0.4 eV at the graphene-GaN interface, the formation of excellent rectifying characteristics with much larger barrier heights is attributed to the presence of a large number of surface states (1.2 x 10(13) states/cm(2)/eV) and the internal spontaneous polarization field of GaN, resulted in a significant upward surface band bending or a bare surface barrier height as high as of 2.9 eV. Using the S parameter of 0.48 (measured from the work function dependence of Schottky barrier height) and the mean barrier height of 1.24 eV, the work function of graphene in the Au/graphene/GaN stack could be approximately estimated to be as low as 3.5 eV. The obtained results indicate that graphene is a promising candidate for use as a Schottky rectifier in GaN semiconductors with n-type conductivity. English TSINGHUA UNIV PRESS THERMIONIC-FIELD-EMISSION LIGHT-EMITTING-DIODES BARRIER HEIGHT ELECTRICAL CHARACTERISTICS RAMAN-SPECTROSCOPY CONTACT RESISTANCE METAL CONTACTS OHMIC CONTACTS TRANSPARENT TEMPERATURE Graphene-GaN Schottky diodes Article 10.1007/s12274-014-0624-7 1 NANO RESEARCH, v.8, no.4, pp.1327 - 1338 NANO RESEARCH 8 4 1327 1338 scie scopus 000353807500026 2-s2.0-84939982475 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article THERMIONIC-FIELD-EMISSION LIGHT-EMITTING-DIODES BARRIER HEIGHT ELECTRICAL CHARACTERISTICS RAMAN-SPECTROSCOPY CONTACT RESISTANCE METAL CONTACTS OHMIC CONTACTS TRANSPARENT TEMPERATURE graphene GaN Schottky diode Schottky barrier height Fermi level pinning