Ahn, Youngkun Kim, Jungyoon Shin, Seongbum Ganorkar, Shraddha Kim, Young-Hwan Kim, Yong-Tae Kim, Seong-Il 2024-01-20T07:31:41Z 2024-01-20T07:31:41Z 2021-09-04 2015-04 0199-6231 https://pubs.kist.re.kr/handle/201004/125634 In this work, we report the efficiency enhancement of a GaAs solar cell by using a luminescent down-shifting (LDS) layer consisting of (CdSe) ZnS quantum dots (QDs). The calculated conversion efficiency shows strong dependence on the luminescence quantum efficiency (LQE) and concentration of QDs in the LDS layer as well as the difference in external quantum efficiency (EQE) of the solar cell in the absorption and emission regions of the QD. Although the irradiance of the modified spectrum by the LDS layer was reduced with increases in QD concentration, the emission range of QDs in the spectrum was intensified. So the optimum parameters need to be calculated carefully. When we measured the GaAs solar cell with the LDS layer, it showed increased current density and consequently improved efficiency. The highest performance difference between the GaAs solar cell efficiencies with and without the LDS layer was over 2.8%, although a crystalline silicon solar cell below the LDS layer showed negative change in efficiency owing to its small EQE difference. English ASME PERFORMANCE CONVERSION Efficiency Enhancement of GaAs Solar Cell Using Luminescent Down-Shifting Layer Consisting of (CdSe)ZnS Quantum Dots With Calculation and Experiment Article 10.1115/1.4028700 1 JOURNAL OF SOLAR ENERGY ENGINEERING-TRANSACTIONS OF THE ASME, v.137, no.2 JOURNAL OF SOLAR ENERGY ENGINEERING-TRANSACTIONS OF THE ASME 137 2 scie scopus 000350571600011 2-s2.0-84993995183 Energy & Fuels Engineering, Mechanical Energy & Fuels Engineering Article PERFORMANCE CONVERSION solar cell efficiency down-shifting luminescence