Jung, Hyejin Chae, Sang Youn Shin, Changhwan Min, Byoung Koun Joo, Oh-Shim Hwang, Yun Jeong 2024-01-20T07:32:08Z 2024-01-20T07:32:08Z 2021-09-05 2015-03-18 1944-8244 https://pubs.kist.re.kr/handle/201004/125657 BiVO4 has been formed into heterojutictions with other metal. oxide semiconductors to increase the efficiency- for solar water oxidation. Here, we suggest that heterojunetion photoanodes of Si and BiVO4 can also increase the efficiency of charge separation and reduce the onset potential of the photocurrent by utilizing the high conduction band edge, potential of Si in a dual-absorber system. We found that a thin TiO2 interlayer is required in-this strucutre to realize 0 2 ma/ suggested photocurrent density enhancement and shifts in onset potential. Si/TiO2/BiVO4 photoandoes showed 1.0-MA/cm(2) at 1.23 V versus the reversible hydrogen electrode (RUE) With 0.11 y (vs RHE) of onset potential, which were a 3.3-fold photocurrent density enhancement and a negative shift in onset potential BiVO4 phutoanodes, English American Chemical Society BIVO4 PHOTOANODES CHARGE SEPARATION EFFICIENT OXIDE PHOTOELECTRODES Effect of the Si/TiO2/BiVO4 Heterojunction on the Onset Potential of Photocurrents for Solar Water Oxidation Article 10.1021/am5086484 1 ACS Applied Materials & Interfaces, v.7, no.10, pp.5788 - 5796 ACS Applied Materials & Interfaces 7 10 5788 5796 scie scopus 000351420300020 2-s2.0-84925357456 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article BIVO4 PHOTOANODES CHARGE SEPARATION EFFICIENT OXIDE PHOTOELECTRODES BiVO4 Si heterojunction TiO2 dual absorber onset potential