Kim, Dong-Seok Won, Chul-Ho Kang, Hee-Sung Kim, Young-Jo Kim, Yong Tae Kang, In Man Lee, Jung-Hee 2024-01-20T07:33:18Z 2024-01-20T07:33:18Z 2021-09-05 2015-03 0268-1242 https://pubs.kist.re.kr/handle/201004/125719 We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. English IOP PUBLISHING LTD ELECTRON-MOBILITY TRANSISTORS CURRENT COLLAPSE ALGAN/GAN HFETS SILICON RELIABILITY MICROSCOPY QUALITY MOVPE Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer Article 10.1088/0268-1242/30/3/035010 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.3 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 30 3 scie scopus 000350631400011 2-s2.0-84923881958 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Article ELECTRON-MOBILITY TRANSISTORS CURRENT COLLAPSE ALGAN/GAN HFETS SILICON RELIABILITY MICROSCOPY QUALITY MOVPE GaN semi-insulating carbon buffer breakdown