Ji, Yongsung Lee, Sang-A Cha, An-Na Goh, Munju Bae, Sukang Lee, Sanghyun Son, Dong Ick Kim, Tae-Wook 2024-01-20T07:33:34Z 2024-01-20T07:33:34Z 2021-09-04 2015-03 1566-1199 https://pubs.kist.re.kr/handle/201004/125734 We investigated the resistive switching characteristics of a polystyrene:ZnO-graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log-log I-V plot and the temperature-variable I-V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO-graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a similar to 10(3) I-ON/I-OFF ratio, stable endurance cycles (10(2) cycles) and retention times (10(4) s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as similar to 3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code. (C) 2015 Elsevier B.V. All rights reserved. English ELSEVIER DEVICES FILMS OXIDE PERFORMANCE INTEGRATION Resistive switching characteristics of ZnO-graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture Article 10.1016/j.orgel.2015.01.010 1 ORGANIC ELECTRONICS, v.18, pp.77 - 83 ORGANIC ELECTRONICS 18 77 83 scie scopus 000349548400011 2-s2.0-84921696412 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article DEVICES FILMS OXIDE PERFORMANCE INTEGRATION Nonvolatile memory Organic resistive memory ZnO-Graphene quantum dot One diode-one resistor architecture