Jeon, Pyo Jin Min, Sung-Wook Kim, Jin Sung Raza, Syed Raza Ali Choi, Kyunghee Lee, Hee Sung Lee, Young Tack Hwang, Do Kyung Choi, Hyoung Joon Im, Seongil 2024-01-20T07:33:35Z 2024-01-20T07:33:35Z 2021-09-04 2015-03 2050-7526 https://pubs.kist.re.kr/handle/201004/125735 Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p- and n-type semiconductors were fabricated on both glass and SiO2/p+-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted. English ROYAL SOC CHEMISTRY Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation Article 10.1039/c4tc02961e 1 JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.12, pp.2751 - 2758 JOURNAL OF MATERIALS CHEMISTRY C 3 12 2751 2758 N scie scopus 000351459300005 2-s2.0-84924873506 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article BIAS LEAKAGE CURRENT SURFACE-CHEMISTRY LAYER MOS2 WSE2 GATE TRANSISTORS MONOLAYERS WSe2 MoS2 van der Waals junction p?n diode fluoropolymer encapsulation