Jo, Jeong-Wan Kim, Jaekyun Kim, Kyung-Tae Kang, Jin-Gu Kim, Myung-Gil Kim, Kwang-Ho Ko, Hyungduk Kim, Yong-Hoon Park, Sung Kyu 2024-01-20T07:34:07Z 2024-01-20T07:34:07Z 2021-09-05 2015-02-18 0935-9648 https://pubs.kist.re.kr/handle/201004/125757 Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process. English WILEY-V C H VERLAG GMBH THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS LOW-TEMPERATURE FABRICATION GATE DIELECTRICS ROOM-TEMPERATURE PERFORMANCE SUBSTRATE CIRCUITS ROUTE TFTS Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors Article 10.1002/adma.201404296 1 ADVANCED MATERIALS, v.27, no.7, pp.1182 - 1188 ADVANCED MATERIALS 27 7 1182 1188 scie scopus 000350057400004 2-s2.0-84923046301 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS LOW-TEMPERATURE FABRICATION GATE DIELECTRICS ROOM-TEMPERATURE PERFORMANCE SUBSTRATE CIRCUITS ROUTE TFTS Deep UV photo-chemical activation Flexible metal oxide gate dielectric Low temperature Rollable metal oxide TFT Solution process