Lee, K. M. Hwang, J. Y. Urban, B. Singh, A. Neogi, A. Lee, S. K. Choi, T. Y. 2024-01-20T07:34:47Z 2024-01-20T07:34:47Z 2021-09-05 2015-02 0038-1098 https://pubs.kist.re.kr/handle/201004/125792 As-grown by chemical vapor deposition (CVD) technique, 3C-silicon carbide (3C-SiC) nanowires (NWs) were studied for their energy states by photonic interactions. Temperature dependent photoluminescence (TDPL) was employed in the study. High energy emissions in UV range were found. In order to better understand origins of the high energy emissions, a time resolved photoluminescence (TRPL) study was executed to manifest the nature of these high energy emissions. Observation with high resolution transmission electron microscopy (HRTEM) confirmed the UV emissions were due to the oxide formed on the outer surface of the NWs. (C) 2014 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD SILICON-CARBIDE POROUS SILICON Origin of broad band emissions of 3C-silicon carbide nanowire by temperature and time resolved photoluminence study Article 10.1016/j.ssc.2014.11.020 1 SOLID STATE COMMUNICATIONS, v.204, pp.16 - 18 SOLID STATE COMMUNICATIONS 204 16 18 scie scopus 000348842000004 2-s2.0-84920757282 Physics, Condensed Matter Physics Article SILICON-CARBIDE POROUS SILICON 3C-SiC nanowire High energy emissions from oxide layers Temperature dependent photoluminescence Time-resolved photoluminescence