Khurelbaatar, Zagarzusem Kil, Yeon-Ho Shim, Kyu-Hwan Cho, Hyunjin Kim, Myung-Jong Kim, Yong-Tae Choi, Chel-Jong 2024-01-20T08:00:26Z 2024-01-20T08:00:26Z 2021-09-05 2015-02 1598-1657 https://pubs.kist.re.kr/handle/201004/125818 We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities. English IEEK PUBLICATION CENTER GE-ON-SI JUNCTION VOLTAGE HEIGHT Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode Article 10.5573/JSTS.2015.15.1.007 1 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.1, pp.7 - 15 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 15 1 7 15 scie scopus kci ART001961710 000353277200003 2-s2.0-84924118986 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article GE-ON-SI JUNCTION VOLTAGE HEIGHT Graphene Ge Si Schottky barrier height ideality factor Schottky barrier inhomogeneities Gaussian distribution