Choi, Eunmi Kim, Areum Kwon, Soon Hyeong Cui, Yinhua Lee, Seon Jea Lee, Ukjae Choi, Hee Soo Hahn, Sang June Yoon, Sung Pil Son, Hyung Bin Pyo, Sung Gyu 2024-01-20T08:00:51Z 2024-01-20T08:00:51Z 2021-09-04 2015-02 0256-1115 https://pubs.kist.re.kr/handle/201004/125840 This paper presents the effect focal length variation by controlling chemical mechanical polishing (CMP) processes on the CIS optical performance. White sensitivity was drastically increased, and saturation signal variation and dead zone deviation were reduced. These experimental results showed that controlled focal length was able to increase CIS optoelectronic performance. English KOREAN INSTITUTE CHEMICAL ENGINEERS SENSITIVITY Effect of chemical mechanical treatment on the optoelectronic properties in CMOS image sensor Article 10.1007/s11814-014-0367-x 1 KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.32, no.2, pp.199 - 201 KOREAN JOURNAL OF CHEMICAL ENGINEERING 32 2 199 201 scie scopus kci ART001957453 000349086400001 2-s2.0-84925534700 Chemistry, Multidisciplinary Engineering, Chemical Chemistry Engineering Article SENSITIVITY CMOS Image Sensor CMP Focal Length White Sensitivity Dead Zone