Choudhary, Nitin Park, Juhong Hwang, Jun Yeon Choi, Wonbong 2024-01-20T08:03:37Z 2024-01-20T08:03:37Z 2021-09-05 2014-12-20 1944-8244 https://pubs.kist.re.kr/handle/201004/125981 Two-dimensional MoS2 is a promising material for next-generation electronic and optoelectronic devices due to its unique electrical and optical properties including the band gap modulation with film thickness. Although MoS2 has shown excellent properties, wafer-scale production with layer control from single to few layers has yet to be demonstrated. The present study explored the large-scale and thickness-modulated growth of atomically thin MoS2 on Si/SiO2 substrates using a two-step sputtering-CVD method. Our process exhibited wafer-scale fabrication and successful thickness modulation of MoS2 layers from monolayer (0.72 nm) to multilayer (12.69 nm) with high uniformity. Electrical measurements on MoS2 field effect transistors (FETs) revealed a p-type semiconductor behavior with much higher field effect mobility and current on/off ratio as compared to previously reported CVD grown MoS2-FETs and amorphous silicon (a-Si) thin film transistors. Our results show that sputter-CVD is a viable method to synthesize large-area, high-quality, and layer-controlled MoS2 that can be adapted in conventional Si-based microfabrication technology and future flexible, high-temperature, and radiation hard electronics/optoelectronics. English American Chemical Society THIN-FILM TRANSISTORS VAPOR-PHASE GROWTH LAYER MOS2 LARGE-AREA ATOMIC LAYERS HYDROTHERMAL SYNTHESIS MOLYBDENUM-DISULFIDE GRAPHENE MOBILITY EXFOLIATION Growth of Large-Scale and Thickness-Modulated MoS2 Nanosheets Article 10.1021/am506198b 1 ACS Applied Materials & Interfaces, v.6, no.23, pp.21215 - 21222 ACS Applied Materials & Interfaces 6 23 21215 21222 scie scopus 000346326600077 2-s2.0-84917706298 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article THIN-FILM TRANSISTORS VAPOR-PHASE GROWTH LAYER MOS2 LARGE-AREA ATOMIC LAYERS HYDROTHERMAL SYNTHESIS MOLYBDENUM-DISULFIDE GRAPHENE MOBILITY EXFOLIATION MoS2 PVD-CVD thin films field effect transistors