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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Jung&#x20;Sub</dcvalue>
<dcvalue element="contributor" qualifier="author">Jung,&#x20;Hun-Gi</dcvalue>
<dcvalue element="contributor" qualifier="author">Choi,&#x20;Wonchang</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Haw&#x20;Young</dcvalue>
<dcvalue element="contributor" qualifier="author">Byun,&#x20;Dongjin</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Joong&#x20;Kee</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-20T08:03:53Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-20T08:03:53Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-05</dcvalue>
<dcvalue element="date" qualifier="issued">2014-12-12</dcvalue>
<dcvalue element="identifier" qualifier="issn">0360-3199</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;125994</dcvalue>
<dcvalue element="description" qualifier="abstract">This&#x20;study&#x20;investigates&#x20;bundle-type&#x20;silicon&#x20;nanorods&#x20;(BSNR)&#x20;that&#x20;are&#x20;aimed&#x20;at&#x20;improving&#x20;the&#x20;discharge&#x20;capacity&#x20;and&#x20;life&#x20;cycle&#x20;characteristics&#x20;of&#x20;secondary&#x20;cells,&#x20;by&#x20;controlling&#x20;the&#x20;shape&#x20;and&#x20;etching&#x20;depth&#x20;of&#x20;silicon&#x20;thick-films&#x20;produced&#x20;by&#x20;electroless&#x20;etching.&#x20;The&#x20;prepared&#x20;BSNR&#x20;structure&#x20;is&#x20;composed&#x20;of&#x20;a&#x20;columnar&#x20;bundle,&#x20;having&#x20;a&#x20;diameter&#x20;of&#x20;100&#x20;nm&#x20;and&#x20;lengths&#x20;of&#x20;1.5&#x20;and&#x20;3.5&#x20;mu&#x20;m.&#x20;The&#x20;etching&#x20;depths&#x20;of&#x20;the&#x20;nanorods&#x20;have&#x20;a&#x20;significant&#x20;effect&#x20;on&#x20;the&#x20;electrochemical&#x20;performance&#x20;characteristics,&#x20;including&#x20;the&#x20;capacity&#x20;fading&#x20;and&#x20;coulombic&#x20;efficiency.&#x20;Using&#x20;a&#x20;BSNR&#x20;electrode&#x20;therefore&#x20;allows&#x20;for&#x20;an&#x20;anode&#x20;with&#x20;a&#x20;high&#x20;capacity&#x20;and&#x20;efficiency&#x20;in&#x20;lithium&#x20;ion&#x20;cells,&#x20;and&#x20;can&#x20;help&#x20;overcome&#x20;the&#x20;issues&#x20;associated&#x20;with&#x20;conventional&#x20;silicon&#x20;thick-films.&#x20;Furthermore,&#x20;as&#x20;a&#x20;result&#x20;of&#x20;its&#x20;unique&#x20;self-relaxant&#x20;structure,&#x20;electrode&#x20;deterioration&#x20;is&#x20;improved&#x20;through&#x20;mitigation&#x20;of&#x20;the&#x20;volume&#x20;change.&#x20;Copyright&#x20;(C)&#x20;2014,&#x20;Hydrogen&#x20;Energy&#x20;Publications,&#x20;LLC.&#x20;Published&#x20;by&#x20;Elsevier&#x20;Ltd.&#x20;All&#x20;rights&#x20;reserved.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">PERGAMON-ELSEVIER&#x20;SCIENCE&#x20;LTD</dcvalue>
<dcvalue element="subject" qualifier="none">NEGATIVE&#x20;ELECTRODE</dcvalue>
<dcvalue element="subject" qualifier="none">NANOWIRES</dcvalue>
<dcvalue element="subject" qualifier="none">MECHANISM</dcvalue>
<dcvalue element="subject" qualifier="none">ARRAYS</dcvalue>
<dcvalue element="title" qualifier="none">Bundle-type&#x20;silicon&#x20;nanorod&#x20;anodes&#x20;produced&#x20;by&#x20;electroless&#x20;etching&#x20;using&#x20;silver&#x20;ions&#x20;and&#x20;their&#x20;electrochemical&#x20;characteristics&#x20;in&#x20;lithium&#x20;ion&#x20;cells</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1016&#x2F;j.ijhydene.2014.02.007</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">INTERNATIONAL&#x20;JOURNAL&#x20;OF&#x20;HYDROGEN&#x20;ENERGY,&#x20;v.39,&#x20;no.36,&#x20;pp.21420&#x20;-&#x20;21428</dcvalue>
<dcvalue element="citation" qualifier="title">INTERNATIONAL&#x20;JOURNAL&#x20;OF&#x20;HYDROGEN&#x20;ENERGY</dcvalue>
<dcvalue element="citation" qualifier="volume">39</dcvalue>
<dcvalue element="citation" qualifier="number">36</dcvalue>
<dcvalue element="citation" qualifier="startPage">21420</dcvalue>
<dcvalue element="citation" qualifier="endPage">21428</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000347576200059</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-84893932635</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Chemistry,&#x20;Physical</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Electrochemistry</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Energy&#x20;&amp;&#x20;Fuels</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Chemistry</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Electrochemistry</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Energy&#x20;&amp;&#x20;Fuels</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">NEGATIVE&#x20;ELECTRODE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">NANOWIRES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MECHANISM</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ARRAYS</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Silicon</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Electroless&#x20;etching</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Metal-assisted&#x20;chemical&#x20;etching</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Anode</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Surface&#x20;modification</dcvalue>
</dublin_core>
