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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Jo,&#x20;Yongcheol</dcvalue>
<dcvalue element="contributor" qualifier="author">Jung,&#x20;Kyooho</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Jongmin</dcvalue>
<dcvalue element="contributor" qualifier="author">Woo,&#x20;Hyeonseok</dcvalue>
<dcvalue element="contributor" qualifier="author">Han,&#x20;Jaeseok</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Hyungsang</dcvalue>
<dcvalue element="contributor" qualifier="author">Hong,&#x20;Jinpyo</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Jeon-Kook</dcvalue>
<dcvalue element="contributor" qualifier="author">Im,&#x20;Hyunsik</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-20T08:04:01Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-20T08:04:01Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-05</dcvalue>
<dcvalue element="date" qualifier="issued">2014-12-08</dcvalue>
<dcvalue element="identifier" qualifier="issn">2045-2322</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;126001</dcvalue>
<dcvalue element="description" qualifier="abstract">This&#x20;work&#x20;reports&#x20;on&#x20;a&#x20;mechanism&#x20;for&#x20;irreversible&#x20;resistive&#x20;switching&#x20;(RS)&#x20;transformation&#x20;from&#x20;bipolar&#x20;to&#x20;unipolar&#x20;RS&#x20;behavior&#x20;in&#x20;SrRuO3&#x20;(SRO)&#x2F;Cr-doped&#x20;SrZrO3&#x20;(SZO:Cr)&#x2F;Pt&#x20;capacitor&#x20;structures&#x20;prepared&#x20;on&#x20;a&#x20;Ti&#x2F;SiO2&#x2F;Si&#x20;substrate.&#x20;Counter-clockwise&#x20;bipolar&#x20;RS&#x20;memory&#x20;current-voltage&#x20;(I-V)&#x20;characteristics&#x20;are&#x20;observed&#x20;within&#x20;the&#x20;RS&#x20;voltage&#x20;window&#x20;of&#x20;-2.5&#x20;to&#x20;+1.9&#x20;V,&#x20;with&#x20;good&#x20;endurance&#x20;and&#x20;retention&#x20;properties.&#x20;As&#x20;the&#x20;bias&#x20;voltage&#x20;increases&#x20;further&#x20;beyond&#x20;4&#x20;V&#x20;under&#x20;a&#x20;forward&#x20;bias,&#x20;a&#x20;forming&#x20;process&#x20;occurs&#x20;resulting&#x20;in&#x20;irreversible&#x20;RS&#x20;mode&#x20;transformation&#x20;from&#x20;bipolar&#x20;to&#x20;unipolar&#x20;mode.&#x20;This&#x20;switching&#x20;mode&#x20;transformation&#x20;is&#x20;a&#x20;direct&#x20;consequence&#x20;of&#x20;thermally&#x20;activated&#x20;Ti&#x20;out-diffusion&#x20;from&#x20;a&#x20;Ti&#x20;adhesion&#x20;layer.&#x20;Transition&#x20;metal&#x20;Ti&#x20;effectively&#x20;out-diffuses&#x20;through&#x20;the&#x20;loose&#x20;Pt&#x20;electrode&#x20;layer&#x20;at&#x20;high&#x20;substrate&#x20;temperatures,&#x20;leading&#x20;to&#x20;the&#x20;unintended&#x20;formation&#x20;of&#x20;a&#x20;thin&#x20;titanium&#x20;oxide&#x20;(TiOx&#x20;where&#x20;x&#x20;&lt;&#x20;2)&#x20;layer&#x20;between&#x20;the&#x20;Pt&#x20;electrode&#x20;and&#x20;the&#x20;SZO:Cr&#x20;layer&#x20;as&#x20;well&#x20;as&#x20;additional&#x20;Ti&#x20;atoms&#x20;in&#x20;the&#x20;SZO:Cr&#x20;layer.&#x20;Cross-sectional&#x20;scanning&#x20;electron&#x20;microscopy,&#x20;transmission&#x20;electron&#x20;microscopy&#x20;and&#x20;Auger&#x20;electron&#x20;spectroscopy&#x20;depth-profile&#x20;measurements&#x20;provided&#x20;apparent&#x20;evidence&#x20;of&#x20;the&#x20;Ti&#x20;out-diffusion&#x20;phenomenon.&#x20;We&#x20;propose&#x20;that&#x20;the&#x20;out-diffusion-induced&#x20;additional&#x20;Ti&#x20;atoms&#x20;in&#x20;the&#x20;SZO:Cr&#x20;layer&#x20;contributes&#x20;to&#x20;the&#x20;creation&#x20;of&#x20;the&#x20;metallic&#x20;filamentary&#x20;channels.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">NATURE&#x20;PUBLISHING&#x20;GROUP</dcvalue>
<dcvalue element="subject" qualifier="none">THIN-FILMS</dcvalue>
<dcvalue element="subject" qualifier="none">OXIDE-FILMS</dcvalue>
<dcvalue element="subject" qualifier="none">MEMORY</dcvalue>
<dcvalue element="subject" qualifier="none">ELECTRODES</dcvalue>
<dcvalue element="subject" qualifier="none">EVOLUTION</dcvalue>
<dcvalue element="title" qualifier="none">Resistance&#x20;switching&#x20;mode&#x20;transformation&#x20;in&#x20;SrRuO3&#x2F;Cr-doped&#x20;SrZrO3&#x2F;Pt&#x20;frameworks&#x20;via&#x20;a&#x20;thermally&#x20;activated&#x20;Ti&#x20;out-diffusion&#x20;process</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1038&#x2F;srep07354</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">SCIENTIFIC&#x20;REPORTS,&#x20;v.4</dcvalue>
<dcvalue element="citation" qualifier="title">SCIENTIFIC&#x20;REPORTS</dcvalue>
<dcvalue element="citation" qualifier="volume">4</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000346273700002</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-84923233657</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Multidisciplinary&#x20;Sciences</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">THIN-FILMS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">OXIDE-FILMS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MEMORY</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ELECTRODES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">EVOLUTION</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">resistance&#x20;switching</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">SrRuO3</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Cr&#x20;doped&#x20;SrZrO3</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Ti&#x20;out-diffusion</dcvalue>
</dublin_core>
