Lim, Jaehoon Jeong, Byeong Guk Park, Myeongjin Kim, Jai Kyeong Pietryga, Jeffrey M. Park, Young-Shin Klimov, Victor I. Lee, Changhee Lee, Doh C. Bae, Wan Ki 2024-01-20T08:04:50Z 2024-01-20T08:04:50Z 2021-09-04 2014-12 0935-9648 https://pubs.kist.re.kr/handle/201004/126045 CdSe/Zn1-XCdXS core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-XCdXS QDs (e.g., CdSe core radius of 2 nm and Zn1-XCdXS shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2)) of deep-red emission, along with improved device stability. English WILEY-V C H VERLAG GMBH Influence of Shell Thickness on the Performance of Light-Emitting Devices Based on CdSe/Zn1-XCdXS Core/Shell Heterostructured Quantum Dots Article 10.1002/adma.201403620 1 ADVANCED MATERIALS, v.26, no.47, pp.8034 - + ADVANCED MATERIALS 26 47 8034 + N scie scopus 000346263100014 2-s2.0-84919723663 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article HIGHLY LUMINESCENT EFFICIENT DIODES BRIGHT RECOMBINATION NANOCRYSTALS INTERFACE charging energy transfer light-emitting devices efficiency roll-off type-I heterostructures