Kim, Kwang-Chon Cho, Cheol Jin Lee, Joohwi Kim, Hyun Jae Jeong, Doo Seok Baek, Seung-Hyub Kim, Jin-Sang Kim, Seong Keun 2024-01-20T08:31:08Z 2024-01-20T08:31:08Z 2021-09-02 2014-11-25 0897-4756 https://pubs.kist.re.kr/handle/201004/126097 The initial growth behavior of ZnO films by atomic layer deposition (ALD) on layer-structured Bi2Te3 was investigated. Despite the lack of adsorption sites on the basal plane of Bi2Te3, negligible incubation in the ALD of ZnO on Bi2Te3 was found in the temperature range from 100 to 160 degrees C, and even the enhancement of the initial growth was observed at 200 degrees C. We demonstrate that a ZnTe interfacial layer was formed in the early growth stage by the interaction between diethylzinc and Bi2Te3, which improved the nucleation of ZnO on the basal plane of Bi2Te3. These results indicate that surface modification via the interaction between a precursor and layer-structured materials is an efficient way to achieve fluent and uniform nucleation on layer-structured materials such as Bi2Te3. English AMER CHEMICAL SOC HIGH-K DIELECTRICS MOS2 Enhancement of Initial Growth of ZnO Films on Layer-Structured Bi2Te3 by Atomic Layer Deposition Article 10.1021/cm502940v 1 CHEMISTRY OF MATERIALS, v.26, no.22, pp.6448 - 6453 CHEMISTRY OF MATERIALS 26 22 6448 6453 scie scopus 000345550600016 2-s2.0-84913533774 Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science Article HIGH-K DIELECTRICS MOS2