Park, M. S. Jain, V. Lee, E. H. Kim, S. H. Pettersson, H. Wang, Q. Song, J. D. Choi, W. J. 2024-01-20T08:31:47Z 2024-01-20T08:31:47Z 2021-09-02 2014-11-06 0013-5194 https://pubs.kist.re.kr/handle/201004/126130 High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K. English INST ENGINEERING TECHNOLOGY-IET InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K Article 10.1049/el.2014.2437 1 ELECTRONICS LETTERS, v.50, no.23, pp.1731 - 1732 ELECTRONICS LETTERS 50 23 1731 1732 scie scopus 000344942600045 2-s2.0-84912136838 Engineering, Electrical & Electronic Engineering Article millimetre wave integrated circuits power combiners transmission lines millimetre-wave broadband waveguide based power combiner lossy waveguide-based power combiner lossy planar transmission lines reflection coefficients millimetre-wave broadband high solid-state power frequency 26 5 GHz to 40 GHz