Park, Jun Beom Kim, Nam-Jung Kim, Yong-Jin Lee, Sang-Hyup Yi, Gyu-Chul 2024-01-20T08:32:41Z 2024-01-20T08:32:41Z 2021-09-02 2014-11 1567-1739 https://pubs.kist.re.kr/handle/201004/126176 We report the growth of high-areal-density GaN nanowires on large-size graphene films using a nickel (Ni) catalyst-assisted vapor-liquid-solid (VLS) method. Before the nanowire growth, the graphene films were prepared on copper foils using hot-wall chemical vapor deposition and transferred onto SiO2/Si substrates. Then, for catalyst-assisted VLS growth, Ni catalyst layers with thickness of a few nanometers were deposited on the graphene-coated substrates using a thermal evaporator. We investigated the effect of the Ni catalyst thickness on the formation of GaN nanowires. Furthermore, the structural and optical characteristics of GaN nanowires were investigated using X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. The GaN nanowires grown on graphene films were transferred onto polymer substrates using a simple lift-off method for applications as flexible photocatalysts. Photocatalysis activities of the GaN nanowires prepared on the flexible polymer substrates were investigated under bending conditions. (C) 2014 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MOLECULAR-BEAM EPITAXY ARRAYS Metal catalyst-assisted growth of GaN nanowires on graphene films for flexible photocatalyst applications Article 10.1016/j.cap.2014.08.007 1 CURRENT APPLIED PHYSICS, v.14, no.11, pp.1437 - 1442 CURRENT APPLIED PHYSICS 14 11 1437 1442 scie scopus kci ART001928397 000343693200007 2-s2.0-84907517813 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article MOLECULAR-BEAM EPITAXY ARRAYS GaN Nanowire Graphene Photocatalyst