Kim, Tae-Wook Cernetic, Nathan Gao, Yan Bae, Sukang Lee, Sanghyun Ma, Hong Chen, Hongzheng Jen, Alex K. -Y. 2024-01-20T08:32:51Z 2024-01-20T08:32:51Z 2021-09-02 2014-11 1566-1199 https://pubs.kist.re.kr/handle/201004/126185 Low voltage organic field effect memory transistors are demonstrated by adapting a hybrid gate dielectric and a solution processed graphene oxide charge trap layer. The hybrid gate dielectric is composed of aluminum oxide (AlOx) and [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) plays an important role of both preventing leakage current from gate electrode and providing an appropriate surface energy to allow for uniform spin-casting of graphene oxide (GO). The hybrid gate dielectric has a breakdown voltage greater than 6 V and capacitance of 0.47 mu F/cm(2). Graphene oxide charge trap layer is spin-cast on top of the hybrid dielectric and has a resulting thickness of approximately 9 nm. The final device structure is Au/Pentacene/PMMA/GO/PhO-19-PA/AlOx/Al. The memory transistors clearly showed a large hysteresis with a memory window of around 2 V under an applied gate bias from 4 V to -5 V. The stored charge within the graphene oxide charge trap layer was measured to be 2.9 x 10(12) cm(-2). The low voltage memory transistor operated well under constant applied gate voltage and time with varying programming times (pulse duration) and voltage pulses (pulse amplitude). In addition, the drain current (I-ds) after programming and erasing remained in their pristine state after 10(4) s and are expected to be retained for more than one year. (C) 2014 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV THIN-FILM TRANSISTORS DIELECTRICS LAYER Low operational voltage and high performance organic field effect memory transistor with solution processed graphene oxide charge storage media Article 10.1016/j.orgel.2014.08.002 1 ORGANIC ELECTRONICS, v.15, no.11, pp.2775 - 2782 ORGANIC ELECTRONICS 15 11 2775 2782 scie scopus 000344424500020 2-s2.0-84906708074 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article THIN-FILM TRANSISTORS DIELECTRICS LAYER Self-assembled monolayer Hybrid gate dielectric Graphene oxide Organic memory transistor Low voltage organic transistor