Soni, Rohit Petraru, Adrian Meuffels, Paul Vavra, Ondrej Ziegler, Martin Kim, Seong Keun Jeong, Doo Seok Pertsev, Nikolay A. Kohlstedt, Hermann 2024-01-20T08:33:09Z 2024-01-20T08:33:09Z 2021-09-02 2014-11 2041-1723 https://pubs.kist.re.kr/handle/201004/126201 Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO3 barrier, La0.7Sr0.3MnO3 bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages. English NATURE PUBLISHING GROUP CRITICAL THICKNESS FIELD POLARIZATION TEMPERATURE FILMS Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions Article 10.1038/ncomms6414 1 NATURE COMMUNICATIONS, v.5 NATURE COMMUNICATIONS 5 scie scopus 000345624800035 2-s2.0-84923222195 Multidisciplinary Sciences Science & Technology - Other Topics Article CRITICAL THICKNESS FIELD POLARIZATION TEMPERATURE FILMS Ferroelectric tunnel junctions Ferroelectrics Nanoelectronics