Barange, Nilesh Kim, Young Dong Ko, Hyungduk Park, Joon-Suh Park, Byoungnam Ko, Doo-Hyun Han, Il Ki 2024-01-20T08:33:17Z 2024-01-20T08:33:17Z 2021-09-02 2014-11 1533-4880 https://pubs.kist.re.kr/handle/201004/126208 The fabrication process for the blue GaN inorganic light emitting diode (ILED) on flexible polyimide (PI) substrate by laser lift off (LLO) method was demonstrated. The GaN epi-structure was grown on patterned sapphire wafer. GaN samples were temporary bonded with polyimide substrate by flexible silver epoxy. Separation of the whole GaN LED film from GaN/sapphire wafer was accomplished using a single KrF excimer (248 nm) laser pulse directed through the transparent sapphire wafer. Device fabrication was carried out on both rigid silicon and flexible polyimide substrate, and I-V performance for both devices was measured. The optimized LLO process for the whole GaN LED film transfer would be applicable in flexible LED applications without compromising electrical properties. English AMER SCIENTIFIC PUBLISHERS FABRICATION Blue Inorganic Light Emitting Diode on Flexible Polyimide Substrate Using Laser Lift-Off Process Article 10.1166/jnn.2014.9898 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp.8237 - 8241 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 14 11 8237 8241 scie scopus 000344126500023 2-s2.0-84908410119 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article FABRICATION Laser Lift Off Inorganic Light Emitting Diode Flexible Substrate Blue Light Emitting Diode