Joung, Jin Gwan Kim, Shin-Ik Moon, Seon Young Kim, Dai-Hong Gwon, Hyo Jin Hong, Seong-Hyeon Chang, Hye Jung Hwang, Jin-Ha Kwon, Beom Jin Kim, Seong Keun Choi, Ji-Won Yoon, Seok-Jin Kang, Chong-Yun Yoo, Kwang Soo Kim, Jin-Sang Baek, Seung-Hyub 2024-01-20T08:33:36Z 2024-01-20T08:33:36Z 2021-09-02 2014-10-22 1944-8244 https://pubs.kist.re.kr/handle/201004/126223 Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>10(6)) and a low leakage current at the OFF state (similar to 10(-13) A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures. English American Chemical Society OXIDE INTERFACES MEMORIES SUPERCONDUCTIVITY NANOCROSSBAR ENHANCEMENT COEXISTENCE MECHANISMS DEPOSITION RERAM Nonvolatile Resistance Switching on Two-Dimensional Electron Gas Article 10.1021/am504354c 1 ACS Applied Materials & Interfaces, v.6, no.20, pp.17785 - 17791 ACS Applied Materials & Interfaces 6 20 17785 17791 scie scopus 000343684200055 2-s2.0-84908192052 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article OXIDE INTERFACES MEMORIES SUPERCONDUCTIVITY NANOCROSSBAR ENHANCEMENT COEXISTENCE MECHANISMS DEPOSITION RERAM two dimensional electron gas complex oxide heterointerface resistance switching nanovoltatile memory