Shon, Yoon Lee, J. W. Lee, D. J. Yoon, I. T. Kwon, Y. H. Kim, H. S. Kang, T. W. Kyhm, J. H. Song, J. D. Koo, H. C. Fu, D. J. Park, C. S. An, H. H. Yoon, Chong S. Kim, E. K. 2024-01-20T09:00:27Z 2024-01-20T09:00:27Z 2021-09-02 2014-10 0022-2313 https://pubs.kist.re.kr/handle/201004/126310 InCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV SEMICONDUCTORS INP GAAS MN New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr Article 10.1016/j.jlumin.2014.06.011 1 JOURNAL OF LUMINESCENCE, v.154, pp.593 - 596 JOURNAL OF LUMINESCENCE 154 593 596 scie scopus 000340687600093 2-s2.0-84903695210 Optics Optics Article SEMICONDUCTORS INP GAAS MN Photoluminescence Cr-implantation P-type InCrP:Zn