Seok, Jun Yeong Song, Seul Ji Yoon, Jung Ho Yoon, Kyung Jean Park, Tae Hyung Kwon, Dae Eun Lim, Hyungkwang Kim, Gun Hwan Jeong, Doo Seok Hwang, Cheol Seong 2024-01-20T09:01:23Z 2024-01-20T09:01:23Z 2021-09-02 2014-09-10 1616-301X https://pubs.kist.re.kr/handle/201004/126356 Issues in the circuitry, integration, and material properties of the two-dimensional (2D) and three-dimensional (3D) crossbar array (CBA)-type resistance switching memories are described. Two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. The advantage of 3D CBAs over 2D CBAs (i.e., the decrease in effect memory cell size) can be exploited only under certain limited conditions due to the increased area and layout complexity of the periphery circuits. The sneak current problem can be mitigated by the adoption of different voltage application schemes and various selection devices. These have critical correlations, however, and depend on the involved types of resistance switching memory. The problem is quantitatively dealt with using the generalized equation for the overall resistance of the parasitic current paths. Atomic layer deposition is discussed in detail as the most feasible fabrication process of 3D CBAs because it can provide the device with the necessary conformality and atomic-level accuracy in thickness control. Other subsidiary issues related to the line resistance, maximum available current, and fabrication technologies are also reviewed. Finally, a summary and outlook on various other applications of 3D CBAs are provided. English WILEY-V C H VERLAG GMBH ATOMIC LAYER DEPOSITION CHEMICAL-VAPOR-DEPOSITION NM HALF-PITCH NONVOLATILE MEMORY HIGH-DENSITY GE2SB2TE5 FILMS THIN-FILMS GROWTH BEHAVIORS SCHOTTKY DIODE HIGH-SPEED A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View Article 10.1002/adfm.201303520 1 ADVANCED FUNCTIONAL MATERIALS, v.24, no.34, pp.5316 - 5339 ADVANCED FUNCTIONAL MATERIALS 24 34 5316 5339 scie scopus 000341834000001 2-s2.0-85027953647 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Review ATOMIC LAYER DEPOSITION CHEMICAL-VAPOR-DEPOSITION NM HALF-PITCH NONVOLATILE MEMORY HIGH-DENSITY GE2SB2TE5 FILMS THIN-FILMS GROWTH BEHAVIORS SCHOTTKY DIODE HIGH-SPEED memory devices resistance switching selection devices three-dimensional crossbar arrays three-dimensional fabrication