Jhon, Young I. Min, Kyung S. Yeom, G. Y. Jhon, Young Min 2024-01-20T09:01:36Z 2024-01-20T09:01:36Z 2021-09-02 2014-09-01 0003-6951 https://pubs.kist.re.kr/handle/201004/126367 We scrutinize time-resolved processes occurring in atomic-layer etching (ALET) of ultra-thin Al2O3 film using BCl3 gas and Ar neutral beam by employing density functional theory calculations and experimental measurements. BCl3 gas is found to be preferentially chemisorbed on Al2O3(100) in trans form with the surface atoms creating O-B and Al-Cl contacts. We disclose that the most likely sequence of etching events involves dominant detachment of Al-associated moieties at early etching stages in good agreement with our concurrent experiments on tracking Al2O3 surface compositional variations during Ar bombardment. In this etching regime, we find that ALET requires half the maximum reaction energy of conventional plasma etching, which greatly increases if the etching sequence changes. (C) 2014 AIP Publishing LLC. English AMER INST PHYSICS ION-BOMBARDMENT MOS DEVICES LOW-ANGLE SIMULATION EVOLUTION DYNAMICS SILICON DAMAGE SURFACES MODEL Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam Article 10.1063/1.4894523 1 APPLIED PHYSICS LETTERS, v.105, no.9 APPLIED PHYSICS LETTERS 105 9 scie scopus 000342749800048 2-s2.0-84907015401 Physics, Applied Physics Article ION-BOMBARDMENT MOS DEVICES LOW-ANGLE SIMULATION EVOLUTION DYNAMICS SILICON DAMAGE SURFACES MODEL Atomic-layer etching Al2O3 Time-resolved process