Shin, Sang Yeol Golovchak, Roman Lee, Suyoun Cheong, Byung-ki Jain, Himanshu Choi, Yong Gyu 2024-01-20T09:01:40Z 2024-01-20T09:01:40Z 2021-09-02 2014-09-01 1359-6462 https://pubs.kist.re.kr/handle/201004/126370 We employ EXAFS spectroscopy to refine the local atomic arrangements of evaporation-deposited equiatomic GeSe film. Amorphous structure of the as-deposited GeSe film turns out to satisfy mainly the 4:2 structural model. The crystallized GeSe film, however, consists of the orthorhombic GeSe crystals with the 3:3 atomic arrangements and quasi-crystalline Ge clusters. Its temperature-dependent electrical resistance is explained in connection with this structural difference, which exemplifies significance of the chemical environments on the electrical switching phenomena observed from amorphous chalcogenide solids. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD PHASE-CHANGE MATERIALS ABSORPTION FINE-STRUCTURE THIN-FILMS OPTICAL-PROPERTIES LOCAL-STRUCTURE ALLOYS MICROSCOPY EXAFS Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film Article 10.1016/j.scriptamat.2014.05.008 1 SCRIPTA MATERIALIA, v.86, pp.56 - 59 SCRIPTA MATERIALIA 86 56 59 scie scopus 000339038400015 2-s2.0-84903397620 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Science & Technology - Other Topics Materials Science Metallurgy & Metallurgical Engineering Article PHASE-CHANGE MATERIALS ABSORPTION FINE-STRUCTURE THIN-FILMS OPTICAL-PROPERTIES LOCAL-STRUCTURE ALLOYS MICROSCOPY EXAFS Amorphous chalcogenide film EXAFS Electrical properties Switching devices